sangdest microelectronics technical data green products data sheet n273, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MUR620 MUR620 ultrafast plastic rectifier applications: ? switching power supply ? power switching circuits ? general purpose features: ? utra-fast switching ? high current capability ? low reverse leakage current ? high surge current capability ? plastic material has ul flammability classification 94v-o ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in mm to-220ac
sangdest microelectronics technical data green products data sheet n273, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MUR620 marking diagram: where xxxxx is yywwl mur = device type 6 = forward current (6a) 20 = reverse voltage (200v) ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping MUR620 to-220ac (pb-free) 50pcs / tube for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel p ackaging specification.
sangdest microelectronics technical data green products data sheet n273, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MUR620 maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol MUR620 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 v average rectified output current (note 1) @t a = 95c io 6.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 80 a forward voltage (per element) @i f = 6.0a, t j =25c v fm1 1.3 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 125c i r 10 500 a maximum reverse recovery time (note 1) trr 35 ns typical thermal resistance junction to ambient (note 2) r ja 25 k/w typical junction capacitance (note 3) c j 80 pf operating and storage temperature range t j , t stg -55 to +150 c approximate weight wt 1.02 g case style to-220ac note: 1.measured with i f =0.5a; i r =1.0a; i rr =0.25a. 2. mount on cu-pad size 16mm16mm on p.c.b. 3. measured at 1.0mhz and applied reverse voltage of 4.0v d.c
sangdest microelectronics technical data green products data sheet n273, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MUR620
sangdest microelectronics technical data green products data sheet n273, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? MUR620 disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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